2SD1005 V(135-270)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SD1005 TRANSISTOR (NPN) 1. BASE FEATURES z Small Flat Package z High Breakdown Voltage z Excellent DC Current Gain Linearity 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current 1 A PC Collector Power Dissipation 500 mW Thermal Resistance From Junction To Ambient 250 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ RθJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=0.1mA,IE=0 100 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 80 V Emitter-base breakdown voltage V(BR)EBO IE=0.1mA,IC=0 5 V Collector cut-off current ICBO VCB=100V,IE=0 0.1 µA Emitter cut-off current IEBO VEB=5V,IC=0 0.1 µA hFE(1)* VCE=2V, IC=100mA 90 hFE(2)* VCE=2V, IC=500mA 25 Collector-emitter saturation voltage VCE(sat)* IC=500mA,IB=50mA Base-emitter saturation voltage VBE(sat)* IC=500mA,IB=50mA Base-emitter voltage VBE* VCE=10V, IC=10mA Transition frequency fT DC current gain Collector output capacitance Cob 400 0.5 0.6 V 1.5 V 0.7 V VCE=5V,IC=10mA 160 MHz VCB=10V, IE=0, f=1MHz 12 pF *Pulse test CLASSIFICATION OF hFE(1) www.cj-elec.com RANK W V U RANGE 90–180 135–270 200–400 MARKING BW BV BU 1 C,Oct,2015 SOT-89-3L Package Outline Dimensions Dimensions In Millimeters Max Min 1.400 1.600 0.320 0.520 0.400 0.580 0.350 0.440 4.400 4.600 1.550 REF. 2.300 2.600 3.940 4.250 1.500 TYP. 3.000 TYP. 0.900 1.200 Symbol A b b1 c D D1 E E1 e e1 L Dimensions In Inches Min Max 0.055 0.063 0.013 0.020 0.016 0.023 0.014 0.017 0.173 0.181 0.061 REF. 0.091 0.102 0.155 0.167 0.060 TYP. 0.118 TYP. 0.035 0.047 SOT-89-3L Suggested Pad Layout www.cj-elec.com 2 C,Oct,2015 SOT-89-3L Tape and Reel www.cj-elec.com 3 C,Oct,2015